Triethylgallium
From Infogalactic: the planetary knowledge core
| 200px | |
| Names | |
|---|---|
| IUPAC name
triethylgallane
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| Systematic IUPAC name
triethylgallium
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| Identifiers | |
| 1115-99-7 | |
| ChemSpider | 59583 |
| Jmol 3D model | Interactive image |
| PubChem | 66198 |
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| Properties | |
| C6H15Ga | |
| Molar mass | 156.9 g/mol |
| Appearance | clear colourless liquid |
| Melting point | −82.3 °C (−116.1 °F; 190.8 K) |
| Boiling point | 143 °C (289 °F; 416 K) |
| Reacts[1] | |
| Vapor pressure | {{{value}}} |
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Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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| Infobox references | |
Triethylgallium, Ga(C2H5)3, or TEGa, is a metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of compound semiconductors.
Properties
TEGa is a clear, colorless, pyrophoric liquid[2] and should be handled with caution.
Applications
TEGa can be a useful alternative to trimethylgallium in the metalorganic vapour phase epitaxy of compound semiconductors because films grown using TEGa have been shown to have a lower carbon impurity concentration.[3]
References
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- Gallium compounds
- Chemical vapour deposition precursors
